Modelling the Threshold Voltage for p-channel E-mode GaN HFETs
نویسندگان
چکیده
P-channel GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistors (MOSHFETs) utilising a polarization induced two Dimensional Hole Gas (2DHG) operate inherently in depletion mode (D-mode). The condition for their conversion to E-mode operation is examined via analytical expressions for the threshold voltage and verified via TCAD simulations. Between the two heterostructures (i) conventional GaN/AlGaN/GaN and (ii) alternate AlGaN/GaN/AlGaN/GaN examined in this work, we demonstrate at higher threshold voltage (伴 】伐匝】 惨), the alternate heterostructure can potentially achieve a higher on-current by a factor of 2 of (b惣宋 仕冊【仕仕), without degradation in the on-off current ratio, expected ideally to be of the order of b層匝.
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